FDPF8D5N10C FDPF8D5N10C is an N-Channel MOSFET from On Semiconductor, featuring a 100V drain-source voltage, 76A continuous drain current, and low 8.5mΩ on-resistance. It is housed in a TO-220F-3 through-hole package and is RoHS compliant.
Mfr Part #:

FDPF8D5N10C

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDPF8D5N10C is an N-Channel MOSFET from On Semiconductor, featuring a 100V drain-source voltage, 76A continuous drain current, and low 8.5mΩ on-resistance. It is housed in a TO-220F-3 through-hole package and is RoHS compliant.
✓ Total Stock: 8,295 pcs
$ Price Range: $1.90 - $4.86

FDPF8D5N10C Available from 1 distributor

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✓ Non-Authorised
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FDPF8D5N10C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDPF8D5N10C Description

Short technical summary and product information.

The FDPF8D5N10C is an N-Channel MOSFET manufactured using onsemi's advanced POWERTRENCH Shielded Gate technology. It is designed to minimize on-state resistance while delivering superior switching performance with a soft body diode. Key electrical specifications include a maximum drain-source voltage of 100V, continuous drain current of 76A at 25°C case temperature, and a maximum on-resistance of 8.5mΩ at VGS=10V. The device features a maximum gate charge of 34nC at 10V and input capacitance of 2475pF at VDS=50V.

 

The MOSFET is rated for single-pulsed avalanche energy of 181mJ and has a gate threshold voltage of 4V. Power dissipation is 35W at the case and 2.4W at ambient temperature. The operating junction temperature range is -55°C to 175°C, with thermal resistance of 4.2°C/W junction-to-case and 62.5°C/W junction-to-ambient.

 

Packaged in a TO-220-3 Full Pack (TO-220F-3) through-hole package, the FDPF8D5N10C is supplied in tubes of 1000 units per standard package. It is RoHS compliant and 100% UIL tested for reliability. Typical applications include synchronous rectification in ATX, server, and telecom power supplies, motor drives, uninterruptible power supplies, and micro solar inverters.

FDPF8D5N10C Quick Information

Product Type: N-Channel MOSFET
Series: PowerTrench
Canonical Name: FDPF8D5N10C N-Channel MOSFET
Subcategory: N-Channel MOSFET

FDPF8D5N10C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDPF8D5N10C Estimated Pricing

Qty Low High
1+ $4.86 $4.86
10+ $3.23 $3.23
100+ $2.30 $2.30
500+ $1.90 $1.90

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDPF8D5N10C Features

  • Rated for 100V drain-source voltage.
  • Supports 76A continuous drain current.
  • Low on-resistance: 8.5mΩ maximum.
  • Shielded Gate technology for efficiency.
  • 100% UIL tested for reliability.

FDPF8D5N10C Applications

  • Synchronous rectification in power supply units.
  • Motor drive and UPS applications.
  • Micro solar inverter designs.

FDPF8D5N10C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDPF8D5N10C?

The maximum drain-source voltage (VDS) is 100 V.

What is the continuous drain current rating?

The continuous drain current (ID) is 76 A at a case temperature of 25°C.

What is the maximum on-resistance of the FDPF8D5N10C?

The maximum drain-source on-resistance (RDS(on)) is 8.5 mΩ at VGS = 10 V and ID = 76 A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the FDPF8D5N10C available in?

It is available in a TO-220-3 Full Pack (TO-220F-3) through-hole package.

Is the FDPF8D5N10C RoHS compliant?

Yes, the device is RoHS compliant as verified by the datasheet.

What is the gate charge of the FDPF8D5N10C?

The maximum gate charge (Qg) is 34 nC at VGS = 10 V.

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