| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
995 pcs
|
995 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
208 pcs
|
208 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDPF7N60NZ is an N-Channel MOSFET manufactured by On Semiconductor. It features a maximum drain-source voltage of 600 V and a continuous drain current of 6.5 A at case temperature Tc. The on-resistance is specified at a maximum of 1.25 Ω when driven at Vgs = 10 V and Id = 3.25 A.
Key electrical characteristics include a maximum gate threshold voltage of 5 V at 250 µA drain current, a maximum gate charge of 17 nC at Vgs = 10 V, and an input capacitance of 730 pF at Vds = 25 V. The device can dissipate up to 33 W of power and operates over a junction temperature range of -55°C to 150°C.
The MOSFET is supplied in a TO-220-3 Full Pack package with a through-hole mounting type (TO-220F-3 supplier device package). It is listed as RoHS3 Compliant, with an MSL rating of 1 Unlimited, though these compliance claims are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.20 | $1.20 |
| 10+ | $1.06 | $1.06 |
| 100+ | $0.83 | $0.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
600 V
TO-220-3 Full Pack (through-hole, supplier device package TO-220F-3)
-55°C to 150°C (junction temperature)
1.25 Ω at Id = 3.25 A, Vgs = 10 V
RoHS3 Compliant (unverified, low confidence)