| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDPF7N50U-G is an N-Channel MOSFET from On Semiconductor's UniFET Ultra FRFET family. It is designed for high-voltage switching applications with a drain-source voltage rating of 500V and continuous drain current of 5A at 25°C (3A at 100°C). The device features a maximum on-resistance of 1.5Ω at Vgs=10V and Id=2.5A, with typical gate charge of 12.8nC and typical input capacitance of 940pF.
This MOSFET is avalanche-rated with a single-pulse avalanche energy of 125mJ and repetitive avalanche energy of 8.9mJ. The body diode offers fast recovery with trr less than 50ns and peak diode recovery dv/dt of 20V/ns, making it suitable for applications requiring improved body diode performance.
The device is housed in a TO-220F-3 full pack package with through-hole mounting. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 31.3W at 25°C case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.02 | $3.02 |
| 10+ | $1.95 | $1.95 |
| 100+ | $1.34 | $1.34 |
| 500+ | $0.97 | $0.97 |
| 1,000+ | $0.82 | $0.82 |
| 10,000+ | $0.80 | $0.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 500V.
The continuous drain current is 5A at Tc=25°C and 3A at Tc=100°C.
The maximum on-resistance (Rds on) is 1.5Ω at Vgs=10V and Id=2.5A.
It is available in a TO-220-3 Full Pack package (TO-220F-3) with through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
The device is marked as RoHS3 Compliant, though this is unverified.
The single-pulse avalanche energy (EAS) is 125mJ and repetitive avalanche energy (EAR) is 8.9mJ.