FDPF680N10T N-Channel Power MOSFET, 100V drain-source voltage, 12A continuous drain current, 68mOhm on-resistance at 10V drive. Through-hole mounting in TO-220F-3 full pack.
Mfr Part #:

FDPF680N10T

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel Power MOSFET, 100V drain-source voltage, 12A continuous drain current, 68mOhm on-resistance at 10V drive. Through-hole mounting in TO-220F-3 full pack.
✓ Total Stock: 17,535 pcs
$ Price Range: $0.43 - $0.69

FDPF680N10T Available from 1 distributor

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✓ Non-Authorised
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17,535 pcs
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FDPF680N10T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDPF680N10T Description

Short technical summary and product information.

The FDPF680N10T is an N-Channel enhancement-mode power MOSFET from ON Semiconductor, designed for efficient switching and power management applications. It features a maximum drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 12A at Tc=25°C. The device achieves a low on-resistance of 68mOhm maximum at Vgs=10V and Id=6A, ensuring minimal conduction losses. Key electrical characteristics include a maximum gate charge of 17nC at Vgs=10V and an input capacitance of 1000pF at Vds=50V, making it suitable for moderate-speed switching applications. The gate threshold voltage is 4.5V maximum at Id=250µA, with a recommended drive voltage of 10V.

 

The MOSFET is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package, which provides electrical insulation and simplifies heatsinking. The device is rated for a maximum power dissipation of 24W at Tc=25°C and operates over a junction temperature range of -55°C to 150°C. It is RoHS3 compliant and REACH unaffected, meeting environmental regulations for global use. Typical applications include power supplies, DC-DC converters, motor control, and high-current load switching in industrial, automotive, and consumer electronics.

FDPF680N10T Quick Information

Product Type: MOSFET - Single
Series: PowerTrench
Canonical Name: N-Channel MOSFET, 100V, 12A, TO-220F-3, ON Semiconductor
Subcategory: Single MOSFET

FDPF680N10T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDPF680N10T Estimated Pricing

Qty Low High
1,000+ $0.69 $0.69
2,000+ $0.43 $0.43

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDPF680N10T Features

  • N-Channel MOSFET rated for 100V drain-source.
  • Low on-resistance of 68mOhm at 10V drive.
  • RoHS3 compliant with REACH unaffected.
  • Through-hole TO-220F-3 package.
  • Operating temperature range -55°C to 150°C.

FDPF680N10T Applications

  • Power management in industrial equipment.
  • DC-DC converter switching applications.
  • Motor control circuits with low voltage.
  • High-current load switching.

FDPF680N10T FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

100V maximum.

What is the package type?

TO-220-3 Full Pack (TO-220F-3).

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the device RoHS compliant?

Yes, RoHS3 compliant and REACH unaffected.

What is the maximum drain current?

12A at Tc=25°C.

What is the gate threshold voltage?

Maximum 4.5V at Id=250µA.

What is the input capacitance?

1000pF maximum at Vds=50V.

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