| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,000 pcs
|
14000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDPF5N50NZU is an N-Channel MOSFET (Metal Oxide) from On Semiconductor. Designed for through-hole mounting in a TO-220-3 Full Pack package (also known as TO-220F-3).
Key electrical characteristics include a maximum drain-source voltage of 500 V, a continuous drain current of 3.9 A (at Tc), and a maximum gate threshold voltage of 5 V at Id=250 µA. The device features a maximum drain-source on-resistance of 2 Ohm at Id=1.95A and Vgs=10V. Total gate charge is typically 12 nC at Vgs=10V, and input capacitance is 485 pF at Vds=25V. The recommended gate drive voltage for lowest Rds(on) is 10 V.
This component is suitable for high-voltage switching applications up to 500V. The TO-220F full-pack package provides isolation between the mounting tab and the die, simplifying heatsink design in certain applications. Maximum power dissipation is 30 W (at Tc), and the junction temperature range is -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 2,000+ | $0.49 | $0.49 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Maximum 500V.
Maximum 3.9A (at Tc).
Maximum 2 Ohm at Id=1.95A, Vgs=10V.
TO-220-3 Full Pack (also referred to as TO-220F-3) for through-hole mounting.
Junction temperature range is -55°C to 150°C.