FDPF55N06 The FDPF55N06 is a 60V, 55A N-Channel MOSFET in a TO-220F through-hole package. It features 22mΩ typical on-resistance and is designed for switching power applications.
Mfr Part #:

FDPF55N06

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDPF55N06 is a 60V, 55A N-Channel MOSFET in a TO-220F through-hole package. It features 22mΩ typical on-resistance and is designed for switching power applications.
✓ Total Stock: 50 pcs
$ Price Range: $1.19 - $2.69

FDPF55N06 Available from 1 distributor

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FDPF55N06 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FDPF55N06 Description

Short technical summary and product information.

The FDPF55N06 is an N-Channel MOSFET from onsemi's UniFET family, designed for high-voltage switching applications. It is rated for a maximum drain-to-source voltage of 60 V and continuous drain current of 55 A at a case temperature of 25°C, with pulsed drain current capability up to 220 A. The device features a low typical on-resistance of 22 mΩ at a 10 V gate drive and a typical gate charge of 30 nC, contributing to efficient switching performance.

 

The MOSFET offers a maximum power dissipation of 48 W at 25°C case temperature and operates over a junction temperature range of -55°C to +150°C. It also provides single-pulsed avalanche energy rating of 480 mJ, making it suitable for robust power switching circuits. The gate threshold voltage is specified at 4 V maximum, and the input capacitance is 1510 pF at 25 V drain-source voltage.

 

This through-hole device comes in a TO-220-3 full-pack package (TO-220F-3) and is supplied in tubes with 1000 units per tube. It is intended for use in switching power converters, power factor correction circuits, flat panel display television power supplies, ATX power supplies, and electronic lamp ballasts.

FDPF55N06 Quick Information

Product Type: Single N-Channel MOSFET
Series: UniFET
Canonical Name: N-Channel MOSFET 60V 55A
Subcategory: N-Channel MOSFET

FDPF55N06 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDPF55N06 Estimated Pricing

Qty Low High
1+ $2.69 $2.69
10+ $1.34 $1.34
100+ $1.19 $1.19

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDPF55N06 Features

  • Rated for 60V drain-source voltage.
  • Continuous drain current up to 55A.
  • Low 22mΩ on-resistance at 10V drive.
  • Through-hole TO-220F full-pack package.
  • Single-pulsed avalanche energy 480mJ.

FDPF55N06 Applications

  • Ideal for power factor correction circuits.
  • Use in flat panel TV power supplies.
  • Suitable for ATX power supply designs.
  • Works in electronic lamp ballast circuits.

FDPF55N06 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDPF55N06?

The maximum drain-to-source voltage (VDSS) is 60 V.

What is the maximum continuous drain current of the FDPF55N06?

The continuous drain current is 55 A at a case temperature of 25°C, and 34.8 A at 100°C.

What is the on-resistance of the FDPF55N06?

The RDS(on) is 22 mΩ maximum (also typical) at VGS = 10 V and ID = 27.5 A.

What is the operating temperature range of the FDPF55N06?

The junction operating temperature range is -55°C to +150°C.

What package is the FDPF55N06 available in?

It comes in a TO-220-3 Full Pack (TO-220F-3) through-hole package, supplied in tubes of 1000 units.

Is the FDPF55N06 RoHS compliant?

The database indicates RoHS3 compliance, but this status is unverified and should be confirmed with the manufacturer.

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