| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,676 pcs
|
3676 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDPF51N25RDTU is a N-Channel MOSFET from On Semiconductor's UniFET family, designed for high-voltage switching applications. It features a drain-source voltage rating of 250V and continuous drain current of 51A at 25°C (30A at 100°C).
Key electrical characteristics include a maximum on-resistance of 60mOhm at Vgs=10V, typical gate charge of 55nC, and typical output capacitance of 63pF. The device is capable of handling 204A pulsed drain current and has a single pulsed avalanche energy rating of 1111mJ.
This MOSFET is housed in a TO-220 Full Pack (TO-220F) with formed leads, offering through-hole mounting and insulation withstand voltage of 2500V RMS. It operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 38W at 25°C case temperature.
The device is suitable for power factor correction, flat panel display TV power supplies, ATX power supplies, and electronic ballasts. It is RoHS3 compliant (unverified) and has MSL 1 classification.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.02 | $4.02 |
| 10+ | $2.63 | $2.63 |
| 100+ | $1.91 | $1.91 |
| 500+ | $1.43 | $1.43 |
| 800+ | $1.21 | $1.21 |
| 5,600+ | $1.18 | $1.18 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
250V.
TO-220-3 Full Pack, Formed Leads (TO-220F).
-55°C to 150°C (junction temperature).
RoHS3 Compliant (unverified).
55nC at 10V.
60mOhm at 25.5A, 10V.
Single pulsed avalanche energy 1111mJ.