| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
476 pcs
|
476 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDPF3N50NZ is an N-Channel enhancement-mode MOSFET from On Semiconductor. Fabricated with MOSFET technology, it delivers a maximum drain-to-source voltage of 500V and continuous drain current of 3A at case temperature. The device exhibits a typical on-resistance of 2.5 ohms at 1.5A and 10V gate drive. Gate charge is limited to 9 nC at 10V, and input capacitance is 280 pF at 25V, enabling efficient switching. The MOSFET is through-hole mounted in a TO-220-3 Full Pack package (supplier device package TO-220F-3) and operates over a junction temperature range of -55°C to 150°C. With maximum power dissipation of 27W at case temperature, the FDPF3N50NZ is suitable for high-voltage switching applications such as power supplies, inverters, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 447+ | $0.67 | $0.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500 V.
3 A at case temperature (Tc).
Maximum 2.5 ohms at 1.5A drain current and 10V gate drive.
TO-220-3 Full Pack (supplier device package TO-220F-3).
-55°C to 150°C (junction temperature).
RoHS3 Compliant (unverified; low confidence).
9 nC maximum at 10V gate drive.