| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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790 pcs
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790 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The FDPF39N20 is an N-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor using a proprietary planar stripe DMOS technology. This advanced technology is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes.
Key electrical specifications include a Drain-Source Voltage (VDSS) of 200V, a continuous Drain Current (ID) of 39A at 25°C, and a typical On-State Resistance (RDS(on)) of 0.066Ω at VGS = 10V. It also features a low gate charge of 38 nC and a reverse transfer capacitance (Crss) of 57 pF, contributing to its fast switching capabilities.
This MOSFET is well-suited for high-efficiency switched-mode power supplies and active power factor correction applications. It is available in a TO-220F package, designed for through-hole mounting.
Absolute maximum ratings include a pulsed drain current of 156A and a single pulsed avalanche energy (EAS) of 860 mJ. The operating and storage temperature range is -55°C to +150°C. Thermal characteristics include a junction-to-case thermal resistance of 3.4°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDSS) for the FDPF39N20 is 200V.
The continuous drain current (ID) for the FDPF39N20 at 25°C is 39A.
The typical on-state resistance (RDS(on)) for the FDPF39N20 is 0.066Ω at VGS = 10V.
The FDPF39N20 is supplied in a TO-220F package.
The operating and storage temperature range for the FDPF39N20 is -55°C to +150°C.