| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,100 pcs
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4100 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDPF3860TYDTU is an N-Channel PowerTrench MOSFET from On Semiconductor (formerly Fairchild Semiconductor). It is designed for high efficiency power switching applications requiring low on-state resistance and fast switching performance.
Key electrical ratings include a maximum drain-source voltage of 100V, continuous drain current of 20A at 25°C case temperature (12.7A at 100°C), and a pulsed drain current capability of 80A. The typical on-resistance is 29.1mOhm at 10V gate drive with a maximum of 38.2mOhm. Gate threshold voltage ranges from 2.5V to 4.5V.
The device features low input capacitance (1350pF typical, 1800pF maximum) and a maximum total gate charge of 35nC at 10V, supporting efficient gate drive. It is rated for single pulsed avalanche energy up to 278mJ and repetitive avalanche energy of 3.4mJ.
The FDPF3860TYDTU is housed in a TO-220F-3 full-pack through-hole package with formed leads, providing isolation and ease of mounting. The operating junction temperature range is -55°C to 150°C with a maximum power dissipation of 33.8W at 25°C case temperature.
The maximum drain-source voltage (Vdss) is 100V.
The continuous drain current is 20A at Tc=25°C and 12.7A at Tc=100°C.
The typical on-resistance is 29.1mOhm and the maximum is 38.2mOhm at Vgs=10V, Id=5.9A.
It comes in a TO-220-3 Full Pack with formed leads (TO-220F-3 Y-Forming), through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant as stated in the datasheet.
The maximum power dissipation is 33.8W at Tc=25°C.