FDPF20N50T FDPF20N50T is an N-Channel MOSFET from onsemi with 500V drain-source breakdown voltage and 20A continuous drain current. It features a low typical on-resistance of 200mOhm and is housed in a TO-220-3 Full Pack package.
Mfr Part #:

FDPF20N50T

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDPF20N50T is an N-Channel MOSFET from onsemi with 500V drain-source breakdown voltage and 20A continuous drain current. It features a low typical on-resistance of 200mOhm and is housed in a TO-220-3 Full Pack package.
✓ Total Stock: 8,846 pcs
$ Price Range: $2.60 - $5.25

FDPF20N50T Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FDPF20N50T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FDPF20N50T Description

Short technical summary and product information.

The FDPF20N50T is an N-Channel power MOSFET part of onsemi's UniFET family, built on planar stripe and DMOS technology. It is designed for high-voltage switching applications requiring efficient power conversion.

 

Key electrical characteristics include a maximum drain-source voltage (Vdss) of 500V, a continuous drain current (Id) of 20A at 25°C (12.9A at 100°C), and a maximum on-resistance (Rds(on)) of 230mOhm at Vgs=10V, with a typical value of 200mOhm. The device offers low gate charge (typical 45.6nC) and low reverse transfer capacitance (typical 27pF), contributing to improved switching performance.

 

The MOSFET is rated for a maximum power dissipation of 38.5W (Tc=25°C) and operates over a junction temperature range of -55°C to +150°C. It is 100% avalanche tested and supports single pulsed avalanche energy up to 1110mJ.

 

Packaged in a through-hole TO-220-3 Full Pack (TO-220F-3) case, the device is suitable for switching power converter applications such as power factor correction (PFC), LCD/LED/PDP TV power supplies, AC-DC power supplies, lighting, and UPS systems.

FDPF20N50T Quick Information

Product Type: MOSFET
Series: UniFET
Canonical Name: FDPF20N50T N-Channel MOSFET 500V 20A 230mOhm TO-220-3 Full Pack
Subcategory: Power MOSFET

FDPF20N50T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDPF20N50T Estimated Pricing

Qty Low High
1+ $5.25 $5.25
10+ $2.60 $2.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDPF20N50T Features

  • Rated for 500V drain-source voltage.
  • 20A continuous drain current at 25°C.
  • Low typical on-resistance of 200mOhm.
  • Low gate charge (typical 45.6nC).
  • 100% avalanche tested.

FDPF20N50T Applications

  • Power factor correction (PFC) circuits.
  • LCD/LED/PDP TV power supplies.
  • AC-DC switching power supplies.
  • Uninterruptible power supplies (UPS).
  • Electronic lamp ballasts.

FDPF20N50T FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vdss) of the FDPF20N50T?

The maximum drain-source voltage (Vdss) is 500V.

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current (Id) at 25°C is 20A.

What is the typical on-resistance (Rds(on)) of this MOSFET?

The typical on-resistance is 200mOhm at Vgs=10V and Id=10A.

What is the package type of the FDPF20N50T?

The device is housed in a TO-220-3 Full Pack (TO-220F-3) through-hole package.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the FDPF20N50T RoHS compliant?

The part is listed as RoHS3 Compliant, but this status is unverified.

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