Mfr Part #:

FDPF17N60NT

FDPF17N60NT is an N-Channel MOSFET from onsemi's UniFET II family, rated at 600V drain-source voltage and 17A continuous drain current. It comes in a TO-220F full-pack package and is designed for switching power converters.

✓ Total Stock: 12,921 pcs

$ Price Range: $1.70 - $4.41

FDPF17N60NT Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	7,007 pcs On Request	7007 pcs	On Request	1	On Request	On Request	12+	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	5,914 pcs On Request	5914 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDPF17N60NT Description

Short technical summary and product information.

The FDPF17N60NT is an N-Channel MOSFET from onsemi's UniFET II family, built on advanced planar stripe and DMOS technology. It features a drain-source voltage (VDSS) of 600V and a continuous drain current (ID) of 17A at 25°C. The device offers a low on-state resistance (RDS(on)) of 340 mΩ max at VGS=10V, and a maximum power dissipation of 62.5W. It also includes an internal gate-source ESD diode capable of withstanding over 2 kV HBM surge stress.

This MOSFET is optimized for switching power converter applications, including power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX power supplies, and electronic lamp ballasts. The TO-220F full-pack package provides isolation and ease of mounting.

Key specifications include a pulsed drain current of 68A, single pulsed avalanche energy of 838 mJ, and a peak diode recovery dv/dt of 10 V/ns. The device is RoHS compliant.

FDPF17N60NT Quick Information

Product Type: N-Channel MOSFET

Series: UniFET II

Canonical Name: FDPF17N60NT N-Channel MOSFET

Subcategory: N-Channel

FDPF17N60NT Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: Compliant

FDPF17N60NT Estimated Pricing

Qty	Low	High
1+	$4.41	$4.41
10+	$2.91	$2.91
50+	$2.27	$2.27
100+	$2.06	$2.06
500+	$1.70	$1.70

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDPF17N60NT Features

600V drain-source voltage rating
17A continuous drain current at 25°C
Low on-resistance of 340 mΩ max
Internal gate-source ESD diode >2 kV HBM
RoHS compliant

FDPF17N60NT Applications

Power factor correction (PFC) circuits
ATX and server power supplies
Flat panel display TV power supplies
Electronic lamp ballasts

FDPF17N60NT FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage of the FDPF17N60NT?

The maximum drain-source voltage (VDSS) is 600V.

What is the continuous drain current rating of the FDPF17N60NT?

The continuous drain current (ID) is 17A at TC=25°C and 10.2A at TC=100°C.

What is the maximum power dissipation of the FDPF17N60NT?

The maximum power dissipation (PD) is 62.5W at TC=25°C.

What package does the FDPF17N60NT come in?

The FDPF17N60NT comes in a TO-220F full-pack package (TO-220F-3SG).

Is the FDPF17N60NT RoHS compliant?

Yes, the FDPF17N60NT is RoHS compliant.

What is the typical gate charge of the FDPF17N60NT?

The typical gate charge (Qg) is 48 nC.

What is the single pulsed avalanche energy rating of the FDPF17N60NT?

The single pulsed avalanche energy (EAS) is 838 mJ.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	17A (Tc)
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3040 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	62.5W (Tc)
Rds On (Max) @ Id, Vgs	340mOhm @ 8.5A, 10V
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	TO-220F-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	5V @ 250µA