FDPF16N50T FDPF16N50T is an N-Channel MOSFET from On Semiconductor with 500V drain-source voltage and 16A drain current. It comes in a TO-220F-3 through-hole package.
Mfr Part #:

FDPF16N50T

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDPF16N50T is an N-Channel MOSFET from On Semiconductor with 500V drain-source voltage and 16A drain current. It comes in a TO-220F-3 through-hole package.
✓ Total Stock: 13,000 pcs
$ Price Range: $1.14

FDPF16N50T Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
11,000 pcs
11000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request On Request

FDPF16N50T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDPF16N50T Description

Short technical summary and product information.

The FDPF16N50T is an N-Channel MOSFET manufactured by On Semiconductor. It features a drain-source voltage (Vdss) of 500V and a continuous drain current of 16A at case temperature (Tc). The device has a maximum on-resistance of 380mOhm at 8A and 10V gate drive, making it suitable for high-voltage switching applications.

 

The MOSFET utilizes metal oxide semiconductor technology and requires a gate drive voltage of 10V for optimal performance. It has a maximum gate charge of 45 nC at 10V and an input capacitance of 1945 pF at 25V drain-source voltage. The threshold voltage is 5V maximum at 250µA drain current.

 

The device is housed in a TO-220-3 Full Pack package (supplier device package TO-220F-3) with through-hole mounting. It can dissipate up to 38.5W at case temperature and operates over a junction temperature range of -55°C to 150°C.

FDPF16N50T Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FDPF16N50T N-Channel MOSFET, 500V, 16A, TO-220F-3
Subcategory: N-Channel MOSFET

FDPF16N50T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDPF16N50T Estimated Pricing

Qty Low High
1,000+ $1.14 $1.14

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDPF16N50T Features

  • N-Channel MOSFET with 500V drain-source voltage.
  • Continuous drain current rating of 16A at case temperature.
  • Low on-resistance of 380mOhm at 8A and 10V gate drive.
  • Through-hole mounting in TO-220F-3 full pack package.
  • Wide operating temperature range from -55°C to 150°C.

FDPF16N50T Applications

  • Used in high-voltage power switching applications.
  • Suitable for AC-DC converters and inverters.
  • Ideal for motor control circuits.
  • Applicable in lighting ballasts.

FDPF16N50T FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDPF16N50T?

The drain-source voltage (Vdss) is 500V.

What is the maximum drain current of the FDPF16N50T?

The continuous drain current is 16A at case temperature (Tc).

What is the on-resistance of the FDPF16N50T?

The maximum on-resistance is 380mOhm at 8A drain current and 10V gate-source voltage.

What is the operating temperature range of the FDPF16N50T?

The operating junction temperature range is -55°C to 150°C.

What package does the FDPF16N50T come in?

It comes in a TO-220-3 Full Pack through-hole package (supplier device package TO-220F-3).

Is the FDPF16N50T RoHS compliant?

The part is listed as RoHS3 Compliant, but this status is unverified.

What is the gate charge of the FDPF16N50T?

The maximum gate charge is 45 nC at 10V gate-source voltage.

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