| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,760 pcs
|
3760 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDPF14N30 is an N-Channel Power MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications requiring efficient power management.
Key electrical characteristics include a maximum drain-to-source voltage of 300 V, continuous drain current of 14 A, and a low on-resistance of 290 mOhm (max) at Vgs = 10 V and Id = 7 A. The device features a gate threshold voltage of 5 V (max) and a gate charge of 25 nC at 10 V, enabling fast switching performance. Input capacitance is 1060 pF at Vds = 25 V.
The MOSFET is housed in a through-hole TO-220-3 Full Pack package (supplier device package TO-220F-3), providing excellent isolation and thermal performance. It is rated for a maximum power dissipation of 35 W and operates over a junction temperature range of -55°C to 150°C.
Typical applications include power supplies, inverters, motor control, and other power conversion circuits where high voltage and low on-resistance are required. The device is RoHS3 compliant and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.82 | $1.82 |
| 50+ | $0.96 | $0.96 |
| 100+ | $0.87 | $0.87 |
| 760+ | $0.53 | $0.53 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 300 V.
The maximum continuous drain current (Id) is 14 A at case temperature.
The maximum on-resistance (Rds on) is 290 mOhm at Id = 7 A and Vgs = 10 V.
It is available in a TO-220-3 Full Pack through-hole package (supplier device package TO-220F-3).
The junction operating temperature range is -55°C to 150°C.
Yes, it is listed as RoHS3 Compliant. (This is unverified, treat as low confidence.)
The maximum gate threshold voltage (Vgs(th)) is 5 V at Id = 250 µA.