| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
105,000 pcs
|
105000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDPF12N50T is an N-Channel power MOSFET using MOSFET (Metal Oxide) technology from On Semiconductor. It is rated for a maximum drain to source voltage of 500 V and a continuous drain current of 11.5 A at case temperature Tc. The device features a maximum on-resistance of 650 mOhm at 6 A and 10 V gate drive. Gate charge is specified at 30 nC at 10 V, and input capacitance is 1315 pF at 25 V drain-source. The maximum gate threshold voltage is 5 V at 250 µA drain current.
The MOSFET is housed in a TO-220-3 Full Pack package (also referred to as TO-220F-3) with through-hole mounting. It can dissipate up to 42 W at case temperature. The operating junction temperature range is -55°C to 150°C. Typical applications include power supply circuits, motor control, and DC-DC converters where high voltage and moderate current switching is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.34 | $3.34 |
| 50+ | $1.68 | $1.68 |
| 100+ | $1.52 | $1.52 |
| 500+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500 V.
11.5 A at case temperature (Tc).
TO-220-3 Full Pack (TO-220F-3), through-hole mounting.
-55°C to 150°C (junction).
Yes, it is listed as RoHS3 compliant (unverified).
650 mOhm at 6 A drain current and 10 V gate-source voltage.
30 nC at 10 V gate-source voltage.