| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDPF12N50FT is an N-Channel enhancement mode power MOSFET using MOSFET (Metal Oxide) technology from ON Semiconductor. It is designed for high-voltage switching applications requiring efficient power management.
Electrical specifications include a drain-to-source voltage (Vdss) of 500 V, continuous drain current of 11.5 A at case temperature 25°C, and a maximum on-resistance of 700 mOhm at 6 A gate drive of 10 V. The device features a maximum gate charge of 30 nC at 10 V and input capacitance of 1395 pF at 25 V, enabling moderate switching performance.
The part is mounted through hole and packaged in a TO-220-3 Full Pack case (supplier device package TO-220F-3), providing full insulation for heatsinking. Operating junction temperature range is -55°C to +150°C, and maximum power dissipation is 42 W at case temperature 25°C.
| Qty | Low | High |
|---|---|---|
| 272+ | $1.10 | $1.10 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500 V.
11.5 A at case temperature 25°C.
700 mOhm at 6 A drain current and 10 V gate drive.
TO-220-3 Full Pack, supplier device package TO-220F-3, through-hole mounting.
-55°C to 150°C (junction temperature).
Yes, listed as RoHS3 Compliant (unverified).
30 nC maximum at 10 V gate-source voltage.