| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,424 pcs
|
3424 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,844 pcs
|
2844 pcs | On Request | 1 | On Request | On Request | 1507+ | On Request | On Request | |
|
2,452 pcs
|
2452 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Pitch | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Tape Width | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDPC8016S is a dual N-Channel asymmetric MOSFET designed by On Semiconductor for power management applications. It integrates two specialized MOSFETs: a control MOSFET (Q1) and a synchronous SyncFET (Q2) with internally connected switch node, simplifying layout for synchronous buck converters.
Key electrical specifications include a maximum drain-source voltage of 25V, gate-source voltage of ±12V, and continuous drain current of 60A for Q1 and 100A for Q2 at case temperature 25°C. The device features low on-resistance: Rds(on) of 3.8 mOhm (Q1) and 1.4 mOhm (Q2) at Vgs=10V. It is a logic level gate device with maximum gate threshold voltage of 2.5V.
The FDPC8016S is housed in an 8-PowerWDFN / PQFN8 package (Power Clip 56, CASE 483AR) measuring 5.00x6.00x0.75 mm with a 1.27 mm pitch. It is surface mount, Pb-free, and RoHS3 compliant. The operating junction temperature range is -55°C to 150°C. With its low inductance packaging and optimized layout, it is suitable for computing, communications, and general point-of-load applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.72 | $2.72 |
| 10+ | $1.75 | $1.75 |
| 100+ | $1.20 | $1.20 |
| 500+ | $0.96 | $0.96 |
| 1,000+ | $0.89 | $0.89 |
| 3,000+ | $0.83 | $0.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 25 V for both MOSFETs.
The package is 8-PowerWDFN / PQFN8 (Power Clip 56, CASE 483AR) with dimensions 5.00 mm x 6.00 mm x 0.75 mm and 1.27 mm pitch.
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS3 compliant and Pb-free.
The device contains two N-Channel MOSFETs in an asymmetric configuration (control MOSFET Q1 and synchronous SyncFET Q2).
At case temperature 25°C, Q1 is rated for 60 A continuous and Q2 for 100 A continuous.
Q1 has a maximum gate charge of 35 nC at Vgs=10V.