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FDPC8014S The FDPC8014S is a dual N-Channel MOSFET array from ON Semiconductor rated for 25V drain-source voltage. It features a logic level gate and a maximum on-resistance of 3.8mOhm, in an 8-PowerWDFN surface mount package.
Mfr Part #:

FDPC8014S

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDPC8014S is a dual N-Channel MOSFET array from ON Semiconductor rated for 25V drain-source voltage. It features a logic level gate and a maximum on-resistance of 3.8mOhm, in an 8-PowerWDFN surface mount package.
Total Stock: 1,000 pcs
$ Price Range: $1.14 - $3.78

FDPC8014S Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

FDPC8014S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

FDPC8014S Description

Short technical summary and product information.

The FDPC8014S is a dual N-Channel MOSFET array manufactured by ON Semiconductor. It combines two Metal Oxide Semiconductor field-effect transistors in an asymmetric configuration: one rated for 20A maximum drain current and 2.1W power dissipation, the other for 41A and 2.3W. Maximum drain-to-source voltage is 25V. The device features a logic level gate, enabling operation with low-voltage drive signals. Maximum on-resistance is 3.8mOhm at 20A drain current and 10V gate-source voltage. Gate charge is 35nC at 10V, and input capacitance is 2375pF at 13V. Maximum gate threshold voltage is 2.5V at 250µA. Operating junction temperature range is -55°C to 150°C.

 

The FDPC8014S is supplied in an 8-PowerWDFN surface mount package, also known as Power Clip 56. The compact package is designed for high-density power circuits. The two N-channel FETs can be used independently or in a totem-pole arrangement, depending on the circuit requirements. The asymmetric current ratings give designers flexibility in matching differing current demands of high-side and low-side switches.

FDPC8014S Quick Information

Product Type: Dual N-Channel MOSFET Array
Canonical Name: Dual N-Channel MOSFET Array
Subcategory: Transistors - FETs, MOSFETs - Arrays

FDPC8014S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDPC8014S Estimated Pricing

Qty Low High
1+ $3.78 $3.78
10+ $2.47 $2.47
100+ $1.72 $1.72
500+ $1.40 $1.40
1,000+ $1.30 $1.30
3,000+ $1.17 $1.17
6,000+ $1.14 $1.14

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDPC8014S Features

  • Rated for 25V drain-source voltage.
  • Dual asymmetric N-channel MOSFET configuration.
  • Logic level gate for low-voltage drive.
  • Low 3.8mOhm maximum on-resistance.
  • Surface mount Power Clip 56 package.

FDPC8014S Applications

  • Ideal for DC-DC converter circuits.
  • Used in battery management systems.
  • Suitable for load switch applications.
  • Designed for motor drive control.
  • Perfect for power management in portable devices.

FDPC8014S FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDPC8014S?

The maximum drain-to-source voltage is 25V.

What is the package type for this MOSFET?

It is available in an 8-PowerWDFN surface mount package, also known as Power Clip 56.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the FDPC8014S RoHS compliant?

Yes, it is listed as RoHS3 compliant in the product data.

What are the maximum drain current ratings for each FET?

One FET is rated for 20A, the other for 41A maximum drain current.

What is the on-resistance at 10V gate drive?

Maximum on-resistance is 3.8mOhm at 20A drain current and 10V gate-source voltage.

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