| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain Current - Pulsed (Maximum) | |
| Drain Current Continuous (Maximum @ Ta=25 °C) | |
| Drain Current Continuous (Maximum @ Tc=25 °C) | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate-Source Voltage | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction to Ambient Thermal Resistance (Maximum @ 1 in² pad 2 oz copper) | |
| Junction to Ambient Thermal Resistance (Maximum @ Minimum footprint) | |
| Junction to Case Thermal Resistance (Maximum) | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Single Operation) (Maximum @ TA = 25 °C) | |
| Power Dissipation (Single Operation) (Maximum @ TC = 25 °C) | |
| Rds On (Max) @ Id, Vgs | |
| Rds On (Max) @ Id, Vgs (Maximum @ Vgs = 10 V, Id = 20 A) | |
| Rds On (Max) @ Id, Vgs (Maximum @ Vgs = 10 V, Id = 40 A) | |
| Rds On (Max) @ Id, Vgs (Maximum @ Vgs = 4.5 V, Id = 37 A) | |
| Single Pulse Avalanche Energy (Maximum) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Terminal Finish | |
| Vgs(th) (Max) @ Id |
The FDPC8014AS is a dual N-Channel MOSFET array from On Semiconductor, designed for high-efficiency power conversion applications. It features an asymmetrical configuration with two MOSFETs: Q1 (control) and Q2 (SyncFET), internally connected at the switch node to simplify synchronous buck converter layout.
Key electrical specifications include a maximum drain-source voltage of 25V for both FETs. Q1 offers a maximum continuous drain current of 20A at 25°C ambient, with a maximum Rds(on) of 3.8mΩ at Vgs=10V and 4.7mΩ at Vgs=4.5V. Q2 handles up to 40A continuous, with an ultra-low Rds(on) of 1.0mΩ at Vgs=10V and 1.2mΩ at Vgs=4.5V. Pulsed drain current ratings reach 266A for Q1 and 1116A for Q2.
Thermal characteristics include a maximum junction temperature of 150°C, with junction-to-case thermal resistance of 6.0°C/W (Q1) and 3.3°C/W (Q2). The device is housed in a 8-PowerWDFN surface mount package (Power Clip 56), which provides low inductance and excellent thermal performance. The operating temperature range is -55°C to 150°C.
This MOSFET array is suitable for computing, communications, and general purpose point-of-load power supplies, where high efficiency and compact layout are critical. The device is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.83 | $0.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 25V for both Q1 and Q2.
The operating temperature range is -55°C to 150°C (junction temperature).
It is supplied in an 8-PowerWDFN surface mount package, also known as Power Clip 56.
The datasheet states it is Pb-Free, Halogen Free/BFR Free and RoHS compliant. However, compliance status is unverified and should be confirmed with the manufacturer.
Q1: maximum 3.8mΩ at Vgs=10V, Id=20A; Q2: maximum 1.0mΩ at Vgs=10V, Id=40A.
At 25°C case temperature, Q1 is rated for 59A continuous and Q2 for 159A. At 25°C ambient, Q1 is rated for 20A and Q2 for 40A.
The maximum gate threshold voltage is 2.5V at Id=250µA.