| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
36,160 pcs
|
36160 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,498 pcs
|
4498 pcs | On Request | 1 | On Request | On Request | 1604+ | On Request | On Request | |
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
662 pcs
|
662 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDPC8012S is a dual N-channel asymmetric MOSFET array designed for synchronous buck converter applications. It integrates two specialized MOSFETs in a single 8-PowerWDFN package: Q1 (control MOSFET) with a maximum Rds(on) of 7.0mOhm at 4.5V and 12A, and Q2 (SyncFET) with a maximum Rds(on) of 2.2mOhm at 4.5V and 23A. The switch node is internally connected to simplify PCB layout and reduce parasitic inductance.
With a maximum drain-source voltage of 25V, the device is suitable for low-voltage power conversion. Q1 can handle continuous drain current of 13A at 25°C ambient (35A at case temperature), while Q2 handles 26A (88A at case temperature). The logic-level gate threshold (max 2.2V at 250µA) allows direct drive from 3.3V or 5V logic. Typical gate charge is 8nC at 4.5V, and input capacitance is 1075pF at 13V.
The device is packaged in a surface-mount Powerclip-33 (8-PowerWDFN) package, offering low inductance and excellent thermal performance. Maximum junction temperature is 150°C, with thermal resistance junction-to-ambient of 77°C/W for Q1 and 63°C/W for Q2. The MOSFET array is RoHS compliant and suitable for computing, communications, and general point-of-load applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.12 | $2.12 |
| 10+ | $1.35 | $1.35 |
| 100+ | $0.91 | $0.91 |
| 500+ | $0.74 | $0.74 |
| 1,000+ | $0.66 | $0.66 |
| 3,000+ | $0.62 | $0.62 |
| 6,000+ | $0.59 | $0.59 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 25V.
The device is available in an 8-PowerWDFN package, also known as Powerclip-33.
The operating junction temperature range is -55°C to 150°C.
Yes, it is designated as RoHS3 compliant.
Q1: 13A at TA=25°C (35A at TC=25°C). Q2: 26A at TA=25°C (88A at TC=25°C).
The maximum gate threshold voltage is 2.2V at ID=250µA.
The maximum gate charge is 8nC at VGS=4.5V.