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FDPC5018SG Dual N-channel asymmetrical MOSFET array rated for 30V drain-source voltage. Q1 offers 56A continuous current with 5.0mΩ Rds(on); Q2 offers 109A with 1.6mΩ Rds(on).
Mfr Part #:

FDPC5018SG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
Dual N-channel asymmetrical MOSFET array rated for 30V drain-source voltage. Q1 offers 56A continuous current with 5.0mΩ Rds(on); Q2 offers 109A with 1.6mΩ Rds(on).
✓ Total Stock: 40,052 pcs
$ Price Range: $1.65 - $2.49

FDPC5018SG Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
40,020 pcs
On Request
40020 pcs On Request 1 On Request On Request On Request On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
32 pcs
On Request
32 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FDPC5018SG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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FDPC5018SG Description

Short technical summary and product information.

The FDPC5018SG is a dual N-channel asymmetrical MOSFET array from On Semiconductor, designed for synchronous buck converter applications. The device integrates a control MOSFET (Q1) and a SyncFET (Q2) with an internally connected switch node, enabling efficient power conversion in computing, communications, and general point-of-load designs.

 

Key electrical specifications include a maximum drain-source voltage of 30V for both MOSFETs. Q1 is rated for continuous drain current of 56A at TC=25°C and 17A at TA=25°C, with a maximum Rds(on) of 5.0mΩ at VGS=10V and 6.5mΩ at VGS=4.5V. Q2 supports continuous current of 109A at TC=25°C and 32A at TA=25°C, with lower Rds(on) of 1.6mΩ at VGS=10V and 2.0mΩ at VGS=4.5V. The device features a gate charge of 24nC and input capacitance of 1715pF, contributing to reduced switching losses.

 

ESD protection is provided with HBM >500V, CDM >1kV, and MM >100V. The operating junction temperature range is -55°C to 150°C. The device is housed in a Power Clip 56 (8-PowerWDFN) surface-mount package and is RoHS3 compliant.

FDPC5018SG Quick Information

Product Type: MOSFET Array
Series: PowerTrench
Canonical Name: FDPC5018SG - Dual N-Channel Asymmetrical MOSFET Array 30V
Subcategory: Dual MOSFET Array

FDPC5018SG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDPC5018SG Estimated Pricing

Qty Low High
1+ $2.49 $2.49
10+ $1.65 $1.65
3,000+ $1.65 $1.65

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDPC5018SG Features

  • Dual N-channel asymmetrical MOSFET array.
  • 30V drain-source voltage rating.
  • Q1: 56A continuous current, 5.0mΩ Rds(on).
  • Q2: 109A continuous current, 1.6mΩ Rds(on).
  • ESD protection up to 1kV CDM.

FDPC5018SG Applications

  • Optimized for synchronous buck converters.
  • Suitable for computing power supplies.
  • Ideal for communications equipment.
  • General purpose point-of-load applications.

FDPC5018SG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

Maximum drain-source voltage is 30V.

What is the package type?

Power Clip 56 (8-PowerWDFN).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the device RoHS compliant?

Yes, RoHS3 compliant (verified).

What is the continuous drain current for Q1 and Q2?

Q1: 56A at TC=25°C, 17A at TA=25°C. Q2: 109A at TC=25°C, 32A at TA=25°C.

What is the Rds(on) for each MOSFET?

Q1: 5.0mΩ at VGS=10V, ID=17A; 6.5mΩ at VGS=4.5V, ID=14A. Q2: 1.6mΩ at VGS=10V, ID=32A; 2.0mΩ at VGS=4.5V, ID=28A.

What ESD protection does the device have?

HBM >500V, CDM >1kV, MM >100V.

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