| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,910 pcs
|
5910 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDPC3D5N025X9D is a dual N-channel MOSFET from On Semiconductor, designed for high-efficiency power management applications. It features a drain-source voltage (Vdss) of 25V and a continuous drain current (Id) of 74A. The device offers a low on-resistance of 3.01 mOhm maximum at 18A and 10V gate drive, enabling low conduction losses. The gate threshold voltage is 3V maximum at 250µA, and the gate charge is 24nC at 4.5V, allowing for fast switching. Input capacitance is 3340pF at 13V. The MOSFET is housed in a 12-PowerWQFN package (12-PQFN 3.3x3.3mm) for surface mount assembly. It operates over a junction temperature range of -55°C to 150°C. The dual configuration integrates two N-channel MOSFETs in a single package, saving board space and simplifying layout in applications such as DC-DC converters, load switches, and battery management systems. The device is RoHS3 compliant and REACH unaffected, with MSL level 1 for unlimited moisture sensitivity.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.76 | $0.76 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25V.
12-PowerWQFN (12-PQFN 3.3x3.3mm) surface mount package.
-55°C to 150°C junction temperature.
Yes, RoHS3 compliant.
Dual N-channel (two N-channel MOSFETs in one package).
74A.
Maximum 3.01 mOhm at 18A, 10V.