| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
23,689 pcs
|
23689 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The FDPC1012S is a dual N-Channel MOSFET array from onsemi, integrating two asymmetrical MOSFETs in a single 8-PowerWDFN package with Powerclip-33 supplier package. It is designed for surface mount applications and operates over a temperature range of -55°C to 150°C.
Key electrical specifications include a drain-to-source voltage (Vdss) of 25V. The continuous drain current (Id) is rated at 13A (Ta) and 35A (Tc) for Q1, and 26A (Ta) and 88A (Tc) for Q2. Maximum on-resistance (Rds(on)) is 7 mΩ at 12A, 4.5V for Q1, and 2.2 mΩ at 23A, 4.5V for Q2. Gate charge (Qg) is 8 nC for Q1 and 25 nC for Q2 at 4.5V. Input capacitance (Ciss) is 1075 pF for Q1 and 3456 pF for Q2 at 13V.
The asymmetrical configuration allows optimization for different roles in power conversion circuits, such as high-side and low-side switches. The low on-resistance and gate charge contribute to high efficiency in DC-DC converters and load switching applications. The part is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 478+ | $0.63 | $0.63 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
25V.
Q1: 13A (Ta) / 35A (Tc); Q2: 26A (Ta) / 88A (Tc).
Q1: 7 mΩ at 12A, 4.5V; Q2: 2.2 mΩ at 23A, 4.5V.
-55°C to 150°C.
8-PowerWDFN package with Powerclip-33 supplier package.
RoHS3 compliant (unverified, conflict with distributor).
Q1: 8 nC at 4.5V; Q2: 25 nC at 4.5V.