FDP8874 The FDP8874 is an N-Channel PowerTrench MOSFET from On Semiconductor, rated for 30V drain-source voltage and 114A continuous drain current (at Tc=25°C). It features a low on-resistance of 5.3mOhm max at Vgs=10V.
Mfr Part #:

FDP8874

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FDP8874 is an N-Channel PowerTrench MOSFET from On Semiconductor, rated for 30V drain-source voltage and 114A continuous drain current (at Tc=25°C). It features a low on-resistance of 5.3mOhm max at Vgs=10V.
✓ Total Stock: 4,400 pcs

FDP8874 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,600 pcs
3600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
800 pcs
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FDP8874 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

FDP8874 Description

Short technical summary and product information.

The FDP8874 from On Semiconductor is a 30V N-Channel PowerTrench MOSFET optimized for DC/DC converter applications. It offers a maximum continuous drain current of 114A at Tc=25°C (Vgs=10V) and 102A at Vgs=4.5V, with a maximum drain-source on-resistance of 5.3mOhm at 10V and 6.6mOhm at 4.5V. Typical on-resistance is even lower at 3.6mOhm (10V) and 4.5mOhm (4.5V).

 

The device features a total gate charge of 72nC maximum (56nC typical) and an input capacitance of 3130pF, ensuring fast switching performance. It is capable of handling 110W power dissipation at Tc=25°C and can withstand a single pulse avalanche energy of 105mJ. The operating junction temperature range is -55°C to 175°C.

 

Housed in a through-hole TO-220-3 (TO-220AB) package, the FDP8874 is suitable for high-power and high-current switching applications. The thermal resistance from junction to case is 1.36°C/W typical, and junction to ambient is 62°C/W typical.

 

The FDP8874 is designed for synchronous or conventional PWM controllers in DC/DC converters, benefiting from low gate charge, low Rds(on), and fast switching speed.

FDP8874 Quick Information

Product Type: N-Channel MOSFET
Series: FDP
Canonical Name: FDP8874 N-Channel PowerTrench MOSFET
Subcategory: N-Channel MOSFET

FDP8874 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FDP8874 Features

  • Low on-resistance of 5.3 mOhm max at 10V.
  • High continuous drain current up to 114A.
  • Optimized for DC/DC converter efficiency.
  • RoHS compliant (unverified).
  • Through-hole TO-220-3 package.

FDP8874 Applications

  • DC/DC converters with synchronous or PWM control.
  • High power and current handling applications.
  • Power management in computing and telecom.

FDP8874 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDP8874?

30V

What package is the FDP8874 available in?

TO-220-3 (TO-220AB) through-hole package.

What is the operating temperature range?

-55°C to 175°C (junction).

Is the FDP8874 RoHS compliant?

The part is listed as RoHS3 Compliant, but this data is unverified (low confidence).

What is the maximum continuous drain current?

114A at Tc=25°C with Vgs=10V; 102A at Vgs=4.5V; 16A at Tamb=25°C with RθJA=62°C/W.

What is the on-resistance of the FDP8874?

Maximum 5.3mOhm at Vgs=10V, Id=40A; typical 3.6mOhm.

What is the typical total gate charge?

56nC typical, 72nC maximum at Vgs=10V.

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