| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The FDP8874 from On Semiconductor is a 30V N-Channel PowerTrench MOSFET optimized for DC/DC converter applications. It offers a maximum continuous drain current of 114A at Tc=25°C (Vgs=10V) and 102A at Vgs=4.5V, with a maximum drain-source on-resistance of 5.3mOhm at 10V and 6.6mOhm at 4.5V. Typical on-resistance is even lower at 3.6mOhm (10V) and 4.5mOhm (4.5V).
The device features a total gate charge of 72nC maximum (56nC typical) and an input capacitance of 3130pF, ensuring fast switching performance. It is capable of handling 110W power dissipation at Tc=25°C and can withstand a single pulse avalanche energy of 105mJ. The operating junction temperature range is -55°C to 175°C.
Housed in a through-hole TO-220-3 (TO-220AB) package, the FDP8874 is suitable for high-power and high-current switching applications. The thermal resistance from junction to case is 1.36°C/W typical, and junction to ambient is 62°C/W typical.
The FDP8874 is designed for synchronous or conventional PWM controllers in DC/DC converters, benefiting from low gate charge, low Rds(on), and fast switching speed.
30V
TO-220-3 (TO-220AB) through-hole package.
-55°C to 175°C (junction).
The part is listed as RoHS3 Compliant, but this data is unverified (low confidence).
114A at Tc=25°C with Vgs=10V; 102A at Vgs=4.5V; 16A at Tamb=25°C with RθJA=62°C/W.
Maximum 5.3mOhm at Vgs=10V, Id=40A; typical 3.6mOhm.
56nC typical, 72nC maximum at Vgs=10V.