FDP8860 FDP8860 is an N-Channel power MOSFET from On Semiconductor. It features a 30V drain-source voltage, 80A continuous drain current, and low on-resistance of 2.5mOhm at 10V gate drive.
Mfr Part #:

FDP8860

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDP8860 is an N-Channel power MOSFET from On Semiconductor. It features a 30V drain-source voltage, 80A continuous drain current, and low on-resistance of 2.5mOhm at 10V gate drive.
✓ Total Stock: 18,400 pcs
$ Price Range: $0.64

FDP8860 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
17,400 pcs
17400 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request

FDP8860 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDP8860 Description

Short technical summary and product information.

The FDP8860 is an N-Channel enhancement-mode power MOSFET designed for high-efficiency power conversion applications. With a maximum drain-source voltage of 30V and continuous drain current of 80A (Tc), it is suitable for low-voltage, high-current switching circuits. The device features a low on-resistance of 2.5 mOhm (max) at Vgs=10V and Id=80A, minimizing conduction losses. Gate charge is 222 nC (max) at Vgs=10V, and input capacitance is 12240 pF (max) at Vds=15V, indicating moderate switching speed. The threshold voltage is 2.5V (max) at Id=250µA. The MOSFET is housed in a TO-220-3 through-hole package, allowing for easy mounting on heatsinks. Operating temperature range is -55°C to 175°C (junction). The device is RoHS and REACH compliant (unverified). Applications include DC-DC converters, motor drives, and power management systems.

FDP8860 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FDP8860 N-Channel MOSFET
Subcategory: Single MOSFETs

FDP8860 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDP8860 Estimated Pricing

Qty Low High
800+ $0.64 $0.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDP8860 Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • 80A continuous drain current at case temperature.
  • Low on-resistance of 2.5 milliohms maximum.
  • TO-220-3 through-hole package for easy mounting.
  • RoHS and REACH compliant (unverified).

FDP8860 Applications

  • Used in DC-DC converter circuits.
  • Ideal for motor drive applications.
  • Suitable for power management systems.
  • Applied in low-voltage high-current switching.
  • Can be used in battery protection circuits.

FDP8860 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V maximum.

What package is the FDP8860 available in?

TO-220-3.

What is the operating temperature range?

-55°C to 175°C (junction).

Is the FDP8860 RoHS compliant?

RoHS3 compliant (unverified).

What is the maximum continuous drain current?

80A at case temperature.

What is the on-resistance?

2.5 mOhm maximum at Id=80A, Vgs=10V.

What is the gate charge?

222 nC maximum at Vgs=10V.

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