| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17,400 pcs
|
17400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP8860 is an N-Channel enhancement-mode power MOSFET designed for high-efficiency power conversion applications. With a maximum drain-source voltage of 30V and continuous drain current of 80A (Tc), it is suitable for low-voltage, high-current switching circuits. The device features a low on-resistance of 2.5 mOhm (max) at Vgs=10V and Id=80A, minimizing conduction losses. Gate charge is 222 nC (max) at Vgs=10V, and input capacitance is 12240 pF (max) at Vds=15V, indicating moderate switching speed. The threshold voltage is 2.5V (max) at Id=250µA. The MOSFET is housed in a TO-220-3 through-hole package, allowing for easy mounting on heatsinks. Operating temperature range is -55°C to 175°C (junction). The device is RoHS and REACH compliant (unverified). Applications include DC-DC converters, motor drives, and power management systems.
| Qty | Low | High |
|---|---|---|
| 800+ | $0.64 | $0.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V maximum.
TO-220-3.
-55°C to 175°C (junction).
RoHS3 compliant (unverified).
80A at case temperature.
2.5 mOhm maximum at Id=80A, Vgs=10V.
222 nC maximum at Vgs=10V.