| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP8447L is an N-Channel MOSFET manufactured by On Semiconductor, utilizing Metal Oxide Semiconductor (MOS) technology. It features a maximum drain-source voltage (Vdss) of 40V and continuous drain current ratings of 12A at ambient temperature (Ta) and 50A at case temperature (Tc). The device offers a low on-resistance of 8.7 mOhm maximum at Vgs=10V and Id=14A, making it suitable for power switching applications. Gate charge is 49 nC at 10V, and input capacitance is 2500 pF at 20V. The MOSFET is capable of withstanding gate-source voltages up to ±20V and has a threshold voltage of 3V maximum at Id=250µA. Power dissipation is rated at 2W (Ta) and 60W (Tc). The device operates over a junction temperature range of -55°C to 150°C. It is offered in a through-hole TO-220-3 package, suitable for PCB mounting. This MOSFET is designed for high-efficiency power conversion, DC-DC converters, and motor control applications.
The maximum drain-source voltage (Vdss) is 40V.
The FDP8447L is offered in a through-hole TO-220-3 package.
The junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant (unverified status).
The continuous drain current is 12A at ambient temperature and 50A at case temperature.
The maximum drain-source on-resistance is 8.7 mOhm at 14A and 10V gate drive.
The maximum gate charge is 49 nC at 10V gate-source voltage.