FDP8442-F085

The FDP8442-F085 is an N-Channel power MOSFET manufactured by On Semiconductor, designed for high-efficiency power switching applications. It utilizes MOSFET (Metal Oxide) technology and is rated for a drain-to-source voltage of 40V. The device can handle a continuous drain current of 80A at case temperature (Tc) and 23A at ambient temperature (Ta). The maximum on-resistance is 3.1mOhm at a gate-source voltage of 10V and a drain current of 80A, ensuring low conduction losses. The gate threshold voltage is 4V maximum at 250µA drain current, and the maximum gate-source voltage is ±20V. The device features a high input capacitance of 12200 pF at 25V Vds and a gate charge of 235 nC at 10V Vgs, which should be considered for gate drive design. The maximum power dissipation is 254W at case temperature. The operating junction temperature range is -55°C to 175°C. The FDP8442-F085 is offered in a TO-220-3 through-hole package, suitable for PCB mounting with standard soldering processes. This MOSFET is RoHS3 compliant and has an MSL rating of 1 (unlimited), though these compliance statuses are unverified. The part is commonly used in power supply circuits, motor control, and other high-current switching applications.