| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP80N06 is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power switching applications requiring high current and moderate voltage.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 60 V, continuous drain current (Id) of 80 A, and a low on-resistance (Rds(on)) of 10 mOhm at 40 A drain current and 10 V gate drive. The gate threshold voltage (Vgs(th)) is a maximum of 4 V at 250 µA. The device can handle a gate-source voltage up to ±20 V.
Switching performance is characterized by a maximum gate charge (Qg) of 74 nC at 10 V and an input capacitance (Ciss) of 3190 pF at 25 V. The operating junction temperature range spans -55°C to 175°C, with a maximum power dissipation of 176 W at case temperature.
The FDP80N06 is housed in a standard TO-220-3 through-hole package, suitable for mounting on heatsinks. It is commonly used in power supplies, DC-DC converters, motor control circuits, and other high-current switching applications.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $0.91 | $0.91 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60 V.
The FDP80N06 comes in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 175°C.
The FDP80N06 is listed as RoHS3 compliant, but this information is unverified.
The maximum on-resistance is 10 mOhm at 40A drain current and 10V gate drive.
The maximum gate charge is 74 nC at 10V gate-source voltage.
The maximum gate threshold voltage is 4V at 250µA drain current.