| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,066 pcs
|
5066 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP8030L is an N-Channel MOSFET from On Semiconductor, designed for high efficiency power switching applications. It features a low on-resistance of 3.5 mOhm at 10V gate drive, enabling high current handling up to 80A. The device is rated for a maximum drain-source voltage of 30V and can dissipate up to 187W. It is housed in a through-hole TO-220-3 package, suitable for easy mounting on heatsinks. The MOSFET operates over a wide temperature range from -65°C to 175°C, making it suitable for demanding environments. With a gate charge of 170 nC and input capacitance of 10500 pF, it is optimized for medium speed switching applications. The logic-level gate drive threshold of 2V allows direct interfacing with low voltage control circuits. Common applications include power supplies, DC-DC converters, and motor control circuits where high efficiency and compact design are required.
| Qty | Low | High |
|---|---|---|
| 54+ | $5.55 | $5.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
TO-220-3 through-hole package.
-65°C to 175°C (junction temperature).
RoHS3 Compliant, but this is unverified and low confidence.
80 A at ambient temperature.
170 nC at 5V gate voltage.
3.5 mOhm at 80A and 10V gate drive.