| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,050 pcs
|
2050 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The FDP7N60NZ is a 600V N-Channel MOSFET manufactured by On Semiconductor. It uses MOSFET (Metal Oxide) technology and is designed for high-voltage switching applications. The device has a maximum drain current of 6.5A at case temperature (Tc) and a maximum power dissipation of 147W. The typical gate drive voltage is 10V, with a maximum gate threshold voltage of 5V at 250µA drain current. The maximum drain-source on-resistance is 1.25 Ohm at 3.25A and 10V gate voltage. The gate charge is 17 nC at 10V, and input capacitance is 730 pF at 25V drain-source voltage. The device can operate over a junction temperature range of -55°C to 150°C. It is supplied in a TO-220-3 through-hole package, which is suitable for PCB mounting. The MOSFET is RoHS3 compliant and has an MSL of 1 (unlimited).
600V
TO-220-3
-55°C to 150°C (junction)
RoHS3 Compliant
6.5 A at case temperature (Tc)
5V maximum at 250µA drain current
147W at case temperature (Tc)