FDP7N50 FDP7N50 is an N-Channel MOSFET from ON Semiconductor. It features a 500V drain-source breakdown voltage, 7A continuous drain current, and a low on-resistance of 900mOhm.
Mfr Part #:

FDP7N50

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FDP7N50 is an N-Channel MOSFET from ON Semiconductor. It features a 500V drain-source breakdown voltage, 7A continuous drain current, and a low on-resistance of 900mOhm.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.68 - $2.47

FDP7N50 Available from 1 distributor

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✓ Non-Authorised
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FDP7N50 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDP7N50 Description

Short technical summary and product information.

The FDP7N50 is an N-Channel power MOSFET manufactured by ON Semiconductor, designed for high-voltage switching applications. It utilizes MOSFET (Metal Oxide) technology and is rated for a drain-source voltage of 500V and a continuous drain current of 7A. The device features a maximum on-resistance of 900mOhm at a gate drive of 10V and a drain current of 3.5A, ensuring efficient power conversion.

 

Electrical characteristics include a gate threshold voltage of 5V maximum at 250µA, a total gate charge of 16.6nC at 10V, and an input capacitance of 940pF at 25V. The maximum gate-source voltage is ±30V, and the device can dissipate up to 89W of power. It operates over a junction temperature range of -55°C to 150°C.

 

The FDP7N50 is housed in a through-hole TO-220-3 package, which facilitates easy mounting on printed circuit boards and provides good thermal performance. This package is suitable for applications requiring moderate power levels and straightforward heatsinking.

 

Typical applications include power supplies, inverters, motor drives, and other power conversion circuits where high voltage and moderate current switching is required. The part is RoHS3 compliant (unverified) and has an MSL of 1 (unlimited).

FDP7N50 Quick Information

Product Type: MOSFET
Canonical Name: FDP7N50 N-Channel MOSFET
Subcategory: Power MOSFET

FDP7N50 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDP7N50 Estimated Pricing

Qty Low High
1+ $2.47 $2.47
10+ $1.57 $1.57
100+ $1.06 $1.06
500+ $0.87 $0.87
1,000+ $0.74 $0.74
2,000+ $0.72 $0.72
5,000+ $0.69 $0.69
10,000+ $0.68 $0.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDP7N50 Features

  • N-Channel MOSFET rated for 500V drain-source voltage.
  • Continuous drain current up to 7A.
  • Low on-resistance of 900mOhm maximum.
  • Through-hole mounting in TO-220-3 package.
  • Operating temperature range from -55°C to 150°C.

FDP7N50 Applications

  • Used in high-voltage power supply circuits.
  • Suitable for switching power converters.
  • Ideal for motor control applications.
  • Applicable in inverter and UPS systems.

FDP7N50 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FDP7N50?

500V.

What is the package type of the FDP7N50?

TO-220-3.

What is the operating temperature range for the FDP7N50?

-55°C to 150°C (junction).

Is the FDP7N50 RoHS compliant?

RoHS3 compliant (unverified).

What is the maximum on-resistance of the FDP7N50?

900mOhm at 3.5A drain current and 10V gate drive.

What is the gate threshold voltage of the FDP7N50?

5V maximum at 250µA drain current.

What is the maximum power dissipation of the FDP7N50?

89W (case temperature).

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