FDP65N06 MOSFET N-CH 60V 65A TO220-3.
Mfr Part #:

FDP65N06

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
MOSFET N-CH 60V 65A TO220-3.
✓ Total Stock: 5,545 pcs
$ Price Range: $0.73 - $1.49

FDP65N06 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,545 pcs
5545 pcs On Request 1 On Request On Request On Request On Request On Request

FDP65N06 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDP65N06 Description

Short technical summary and product information.

The FDP65N06 is an N-Channel power MOSFET from On Semiconductor, designed for high-efficiency switching applications. It features a drain-to-source voltage (Vdss) of 60V and a continuous drain current of 65A at Tc. The device offers a low maximum on-resistance of 16mOhm at 32.5A and 10V gate drive, minimizing conduction losses.

 

With a maximum gate charge of 43nC at 10V and an input capacitance of 2170pF at 25V, the FDP65N06 is optimized for fast switching performance. The gate threshold voltage is 4V maximum at 250µA, and the maximum gate-source voltage is ±20V. The device can dissipate up to 135W of power at Tc and operates over a junction temperature range of -55°C to 150°C.

 

Housed in a through-hole TO-220-3 package, the FDP65N06 is suitable for designs requiring robust thermal performance and easy PCB mounting. Its electrical characteristics make it a good fit for power supplies, DC-DC converters, and motor control circuits where high current and low voltage drop are critical.

FDP65N06 Quick Information

Product Type: N-Channel MOSFET
Series: UniFET
Canonical Name: FDP65N06
Subcategory: N-Channel MOSFET

FDP65N06 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDP65N06 Estimated Pricing

Qty Low High
1+ $1.49 $1.49
10+ $1.33 $1.33
100+ $1.07 $1.07
500+ $0.88 $0.88
1,000+ $0.73 $0.73

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDP65N06 Features

  • 60V drain-source voltage rating.
  • 65A continuous drain current capability.
  • 16mOhm maximum on-resistance at 10V gate drive.
  • 43nC maximum gate charge for fast switching.
  • Through-hole TO-220-3 package for easy mounting.

FDP65N06 Applications

  • Ideal for high-power switching power supplies.
  • Suitable for DC-DC converter circuits.
  • Used in motor drive and control applications.
  • Applicable in uninterruptible power supplies (UPS).

FDP65N06 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the FDP65N06?

The maximum drain-to-source voltage (Vdss) is 60V.

What is the continuous drain current rating of the FDP65N06?

The continuous drain current is 65A at Tc.

What is the package type of the FDP65N06?

The FDP65N06 is offered in a TO-220-3 through-hole package.

What is the operating temperature range of the FDP65N06?

The operating junction temperature range is -55°C to 150°C.

Is the FDP65N06 RoHS compliant?

The part is listed as RoHS3 Compliant, but this status is unverified and should be confirmed with the manufacturer.

What is the maximum on-resistance of the FDP65N06?

The maximum Rds(on) is 16mOhm at Id=32.5A and Vgs=10V.

What is the gate threshold voltage of the FDP65N06?

The maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA.

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