| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,120 pcs
|
7120 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP61N20 is an N-Channel MOSFET from ON Semiconductor designed for high-power switching applications. It features a drain-to-source voltage rating of 200V and a continuous drain current of 61A at case temperature, making it suitable for demanding power conversion circuits.
The device offers a maximum on-resistance of 41mOhm at 30.5A and 10V gate drive, contributing to efficient operation. With a maximum gate charge of 75nC at 10V and input capacitance of 3380pF at 25V, the device is designed for moderate-speed switching applications.
The FDP61N20 is housed in a TO-220-3 package with through-hole mounting, facilitating easy PCB integration and heat dissipation. It operates over a junction temperature range of -55°C to 150°C and can dissipate up to 417W at case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.66 | $3.66 |
| 10+ | $1.86 | $1.86 |
| 100+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The FDP61N20 has a drain-to-source voltage rating of 200V.
The maximum drain current is 61A at case temperature (Tc).
The maximum on-resistance is 41mOhm at 30.5A drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 150°C.
The FDP61N20 is available in a TO-220-3 package with through-hole mounting.
The maximum power dissipation is 417W at case temperature (Tc).
The maximum gate threshold voltage is 5V at a drain current of 250µA.