| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP6030BL is a N-Channel power MOSFET manufactured by ON Semiconductor. It is designed for low-voltage power switching applications requiring efficient performance.
Key electrical specifications include a drain-source voltage (Vdss) of 30V, continuous drain current (Id) of 40A at Tc=25°C, and a maximum on-resistance (Rds(on)) of 18mOhm at Vgs=10V and Id=20A. The gate threshold voltage is 3V maximum at Id=250µA. The device features a maximum gate charge of 17nC at Vgs=5V and input capacitance of 1160pF at Vds=15V.
The MOSFET is housed in a through-hole TO-220-3 package, suitable for board-level mounting. It operates over a junction temperature range of -65°C to 175°C and has a maximum power dissipation of 60W at Tc=25°C.
30V.
TO-220-3 through-hole package.
-65°C to 175°C (junction temperature).
RoHS3 compliant (unverified).
18mOhm at Vgs=10V, Id=20A.
17nC at Vgs=5V.
1160pF at Vds=15V.