FDP5N60NZ N-Channel MOSFET from On Semiconductor, rated 600V and 4.5A, with 2 Ohm on-resistance, in a TO-220-3 through-hole package.
Mfr Part #:

FDP5N60NZ

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from On Semiconductor, rated 600V and 4.5A, with 2 Ohm on-resistance, in a TO-220-3 through-hole package.
✓ Total Stock: 2,400 pcs
$ Price Range: $0.61 - $0.61

FDP5N60NZ Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,400 pcs
2400 pcs On Request 1 On Request On Request On Request On Request On Request

FDP5N60NZ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDP5N60NZ Description

Short technical summary and product information.

The FDP5N60NZ is an N-Channel power MOSFET manufactured by On Semiconductor, featuring a drain-to-source voltage of 600V and a continuous drain current rating of 4.5A at 25°C case temperature. It employs standard MOSFET (Metal Oxide) technology.

 

The device has a maximum on-resistance of 2 Ohms at 2.25A with a 10V gate drive, and a maximum gate charge of 13 nC at 10V. Input capacitance is 600 pF at 25V drain-source. The gate threshold voltage can reach up to 5V at 250µA drain current, and the maximum gate-source voltage is ±25V.

 

Power dissipation is rated at 100W at 25°C case temperature, with an operating junction temperature range of -55°C to 150°C. The MOSFET is supplied in a TO-220-3 through-hole package, suitable for solder attachment to a heatsink or PCB.

FDP5N60NZ Quick Information

Product Type: MOSFET
Series: UniFET-II
Canonical Name: N-Channel MOSFET, 600V, 4.5A, TO-220-3
Subcategory: N-Channel Power MOSFET

FDP5N60NZ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDP5N60NZ Estimated Pricing

Qty Low High
800+ $0.61 $0.61
1,600+ $0.61 $0.61

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDP5N60NZ Features

  • N-Channel MOSFET with 600V drain-source voltage.
  • Continuous drain current rating of 4.5A at 25°C.
  • Maximum on-resistance of 2 Ohms at 10V gate drive.
  • Rated for 100W power dissipation at case temperature 25°C.
  • Through-hole TO-220-3 package for easy mounting.

FDP5N60NZ Applications

  • Used in power supply switching circuits.
  • Suitable for motor control and inverter applications.
  • Applicable in DC-DC converter designs.
  • Ideal for high-voltage load switching.

FDP5N60NZ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating of the FDP5N60NZ?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current rating?

The continuous drain current (Id) is 4.5A at 25°C case temperature.

What is the maximum on-resistance?

The maximum Rds(on) is 2 Ohms at Id=2.25A and Vgs=10V.

What is the package type of this MOSFET?

The device is supplied in a TO-220-3 through-hole package.

What is the operating temperature range?

The junction operating temperature range is -55°C to 150°C.

What is the gate threshold voltage?

The maximum gate threshold voltage is 5V at a drain current of 250µA.

What is the power dissipation rating?

Maximum power dissipation is 100W at 25°C case temperature.

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