| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,420 pcs
|
3420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The FDP5800 is an N-Channel MOSFET manufactured by On Semiconductor, utilizing the POWERTRENCH process for low on-state resistance. It features a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 80A at Tc=25°C, limited by the package. The device offers a typical on-resistance of 4.6 mΩ at VGS=10V and ID=80A, with a maximum of 6.0 mΩ. It supports gate drive voltages of 4.5V and 10V, and has a maximum gate-source voltage of ±20V.
This MOSFET is designed for high-power applications such as power tools, motor drives, uninterruptible power supplies, synchronous rectification, and battery protection circuits. It provides a maximum power dissipation of 242W at Tc=25°C and operates over a junction temperature range of -55°C to +175°C. The device has a low gate charge of 145 nC at VGS=10V, contributing to efficient switching performance.
The FDP5800 is available in a TO-220-3 through-hole package, with a standard package quantity of 800 units per tube. It is compliant with RoHS, REACH, and has an MSL of 1 (unlimited). The part is also known under the DigiKey part number 2156-FDP5800-ND.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.61 | $3.61 |
| 10+ | $2.13 | $2.13 |
| 100+ | $1.74 | $1.74 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V
-55°C to +175°C (junction temperature)
TO-220-3 through-hole package
Yes, it is listed as RoHS3 compliant, but this is unverified.
80A at Tc=25°C, limited by package. Also 14A at Ta=25°C.
4.6 mΩ typical at VGS=10V and ID=80A, with maximum 6.0 mΩ.
±20V