Mfr Part #:

FDP52N20

N-Channel MOSFET from On Semiconductor with 200V drain-source breakdown voltage, 52A continuous drain current, and 49mΩ on-resistance. Housed in a TO-220-3 through-hole package.

✓ Total Stock: 8,433 pcs

$ Price Range: $1.64 - $3.60

FDP52N20 Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	6,413 pcs On Request	6413 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	2,020 pcs On Request	2020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FDP52N20 Description

Short technical summary and product information.

The FDP52N20 is an N-Channel enhancement mode power MOSFET produced by On Semiconductor (formerly Fairchild Semiconductor) using planar stripe DMOS technology. It features a drain-source breakdown voltage of 200V and a continuous drain current of 52A at 25°C case temperature. The device offers a low typical on-resistance of 41mΩ at VGS=10V and ID=26A, with a maximum of 49mΩ. Gate charge is typically 49nC, enabling fast switching performance. The MOSFET is 100% avalanche tested with a single pulsed avalanche energy rating of 2520mJ. It is designed for high-efficiency switching mode power supplies and active power factor correction. The device is available in a TO-220-3 through-hole package with a junction-to-case thermal resistance of 0.35°C/W and an operating temperature range of -55°C to 150°C. The part is RoHS compliant.

FDP52N20 Quick Information

Product Type: N-Channel MOSFET

Series: FDP

Canonical Name: FDP52N20 N-Channel MOSFET 200V 52A TO-220-3

Subcategory: N-Channel MOSFET

FDP52N20 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

FDP52N20 Estimated Pricing

Qty	Low	High
1+	$3.60	$3.60
10+	$1.82	$1.82
100+	$1.64	$1.64

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDP52N20 Features

200V drain-source breakdown voltage.
52A continuous drain current at 25°C.
Low on-resistance of 49mΩ maximum.
Fast switching with typical gate charge of 49nC.
100% avalanche tested with 2520mJ energy rating.

FDP52N20 Applications

High efficiency switching mode power supplies.
Active power factor correction.
DC-DC converters.
Motor control circuits.
Inverter stages.

FDP52N20 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FDP52N20?

200V.

What package does the FDP52N20 come in?

TO-220-3 through-hole package.

What is the operating temperature range?

-55°C to 150°C.

Is the FDP52N20 RoHS compliant?

The datasheet states RoHS compliance, but this is unverified.

What is the on-resistance of the FDP52N20?

Maximum 49mΩ at VGS=10V, ID=26A; typical 41mΩ.

What is the gate charge?

Maximum 63nC, typical 49nC at VGS=10V.

What is the continuous drain current?

52A at TC=25°C, 33A at TC=100°C.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	52 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	63 nC
Input Capacitance (Ciss) (Max) @ Vds	2900 pF
Mounting Type	Through Hole
Operating Temperature	-55°C to 150°C
Power Dissipation (Max)	357 W
Rds On (Max) @ Id, Vgs	49mOhm @ 26A, 10V
SVHC Present	Not Present
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	TO-220-3
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	3.0 V - 5.0 V