FDP51N25 N-Channel MOSFET rated 250V Vdss, 51A continuous drain current, 60mOhm max Rds(on) at 10V. Housed in a through-hole TO-220-3 package.
Mfr Part #:

FDP51N25

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated 250V Vdss, 51A continuous drain current, 60mOhm max Rds(on) at 10V. Housed in a through-hole TO-220-3 package.
✓ Total Stock: 8,071 pcs
$ Price Range: $1.48 - $3.85

FDP51N25 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,750 pcs
5750 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,321 pcs
1321 pcs On Request 1 On Request On Request On Request On Request On Request
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1,000 pcs
1000 pcs On Request 1 On Request On Request 20+ On Request On Request

FDP51N25 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDP51N25 Description

Short technical summary and product information.

The FDP51N25 is an N-Channel MOSFET from onsemi's UniFET family, built on planar stripe and DMOS technology. It is designed to deliver low on-state resistance of 60mOhm maximum at 25.5A and 10V, with a typical value of 48mOhm. The device supports a continuous drain current of 51A at case temperature 25°C and a maximum power dissipation of 320W.

 

This MOSFET offers a gate threshold voltage of 5V maximum, gate charge of 70nC typical, and input capacitance of 3410pF at 25V. It is capable of handling single pulsed avalanche energy up to 1111mJ and repetitive avalanche energy up to 32mJ. The peak diode recovery dv/dt is 4.5V/ns.

 

The FDP51N25 is packaged in a through-hole TO-220-3 case, suitable for a variety of switching power conversion applications including power factor correction, flat panel display TV power supplies, ATX power supplies, and electronic lamp ballasts. The operating junction temperature range is -55°C to 150°C.

FDP51N25 Quick Information

Product Type: MOSFET
Series: C0069
Canonical Name: FDP51N25 N-Channel MOSFET 250V 51A TO-220-3
Subcategory: N-Channel MOSFET

FDP51N25 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FDP51N25 Estimated Pricing

Qty Low High
1+ $3.85 $3.85
10+ $1.96 $1.96
100+ $1.77 $1.77
500+ $1.48 $1.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDP51N25 Features

  • 250V drain-source voltage rating.
  • 51A continuous drain current at 25°C.
  • 60mOhm max on-resistance at 10V.
  • 1111mJ single pulsed avalanche energy.
  • Through-hole TO-220-3 package.

FDP51N25 Applications

  • Suitable for power factor correction circuits.
  • Used in flat panel display TV power supplies.
  • Ideal for ATX and computer power supplies.
  • Applicable to electronic lamp ballasts.

FDP51N25 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FDP51N25?

250V.

What is the continuous drain current rating?

51A at case temperature 25°C.

What is the maximum on-resistance?

60mOhm at Vgs=10V, Id=25.5A.

What package does the FDP51N25 come in?

Through-hole TO-220-3.

What is the operating junction temperature range?

-55°C to 150°C.

Is the FDP51N25 RoHS compliant?

RoHS3 Compliant (low confidence, unverified).

What is the maximum gate-source voltage?

±30V.

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