FDP4D5N10C N-Channel MOSFET with 100V drain-source voltage and 128A continuous drain current. Features low on-resistance of 4.5mOhm at 10V gate drive.
Mfr Part #:

FDP4D5N10C

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 100V drain-source voltage and 128A continuous drain current. Features low on-resistance of 4.5mOhm at 10V gate drive.
✓ Total Stock: 2,314 pcs
$ Price Range: $3.32 - $7.00

FDP4D5N10C Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,314 pcs
2314 pcs On Request 1 On Request On Request On Request On Request On Request

FDP4D5N10C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FDP4D5N10C Description

Short technical summary and product information.

The FDP4D5N10C is an N-Channel MOSFET from onsemi's PowerTrench family, utilizing Shielded Gate technology to minimize on-state resistance while maintaining superior switching performance. It is rated for a drain-source voltage of 100V and a continuous drain current of 128A at 25°C case temperature, with a pulsed drain current capability of 512A. The device features a maximum on-resistance of 4.5mOhm at Vgs=10V and Id=100A, and a typical gate charge of 68nC at Vgs=10V.

 

This MOSFET is designed for applications requiring high efficiency and fast switching, such as synchronous rectification in ATX/server/telecom power supplies, motor drives, uninterruptible power supplies, and micro solar inverters. It is 100% UIL tested and offers extremely low reverse recovery charge (Qrr). The device is Pb-free, halide-free, and RoHS compliant.

 

The FDP4D5N10C is housed in a TO-220-3 package with through-hole mounting, providing a junction-to-case thermal resistance of 1.0°C/W and a maximum power dissipation of 150W at 25°C case temperature. It operates over a junction temperature range of -55°C to 175°C.

FDP4D5N10C Quick Information

Product Type: MOSFET
Series: FDP4D5N10C
Canonical Name: FDP4D5N10C N-Channel MOSFET
Subcategory: Single MOSFET

FDP4D5N10C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FDP4D5N10C Estimated Pricing

Qty Low High
1+ $7.00 $7.00
10+ $3.76 $3.76
100+ $3.43 $3.43
500+ $3.32 $3.32

Estimated market price range - modelled values for guidance only, not live distributor offers.

FDP4D5N10C Features

  • 100V drain-source voltage rating.
  • 128A continuous drain current at 25°C.
  • 4.5mOhm maximum on-resistance at 10V.
  • Shielded Gate PowerTrench technology.
  • Pb-free, halide-free, RoHS compliant.

FDP4D5N10C Applications

  • Synchronous rectification in ATX/server/telecom PSU.
  • Motor drives and uninterruptible power supplies.
  • Micro solar inverter applications.
  • High-efficiency power conversion circuits.

FDP4D5N10C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the FDP4D5N10C?

The maximum drain-source voltage (Vds) is 100V.

What is the continuous drain current rating of the FDP4D5N10C?

The continuous drain current is 128A at Tc=25°C and 91A at Tc=100°C.

What is the on-resistance of the FDP4D5N10C?

The maximum on-resistance is 4.5mOhm at Vgs=10V and Id=100A.

What is the operating temperature range of the FDP4D5N10C?

The operating junction temperature range is -55°C to 175°C.

What package does the FDP4D5N10C come in?

The FDP4D5N10C is available in a TO-220-3 package with through-hole mounting.

Is the FDP4D5N10C RoHS compliant?

Yes, the FDP4D5N10C is RoHS3 compliant, Pb-free, and halide-free as per the datasheet.

What is the gate charge of the FDP4D5N10C?

The maximum gate charge (Qg) is 68nC at Vgs=10V.

Home
Account

Categories