| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,700 pcs
|
4700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,570 pcs
|
4570 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP42AN15A0 is an N-Channel enhancement-mode power MOSFET manufactured using MOSFET (Metal Oxide) technology by On Semiconductor. It is designed for high-efficiency power conversion and switching applications.
Key electrical specifications include a drain-to-source voltage (Vdss) of 150V, a continuous drain current of 35A at case temperature (Tc=25°C), and a maximum on-resistance of 42mOhm at 12A and 10V gate drive. The device requires a gate drive voltage of 6V to 10V for optimal Rds(on) performance, with a maximum gate threshold voltage of 4V at 250µA. Gate charge is 39nC at 10V, and input capacitance is 2150pF at 25V Vds.
The MOSFET is housed in a standard TO-220-3 through-hole package, suitable for PCB mounting with a heatsink. It can dissipate up to 150W at case temperature and operates over a junction temperature range of -55°C to 175°C. The maximum gate-to-source voltage is ±20V.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.39 | $3.39 |
| 10+ | $1.71 | $1.71 |
| 100+ | $1.53 | $1.53 |
| 500+ | $1.25 | $1.25 |
| 1,000+ | $1.24 | $1.24 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 150V.
The continuous drain current is 5A at ambient temperature (Ta=25°C) and 35A at case temperature (Tc=25°C).
The maximum on-resistance (Rds(on)) is 42mOhm at Id=12A and Vgs=10V.
It comes in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 175°C.
The maximum power dissipation is 150W at case temperature (Tc=25°C).
The maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA.