| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,568 pcs
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2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDP4020P is a P-Channel enhancement mode MOSFET designed for low voltage applications. It features a maximum drain-source voltage of -20V and a continuous drain current of -16A at 25°C case temperature. The device offers low on-resistance: 80 mΩ typical at Vgs = -4.5V and 110 mΩ typical at Vgs = -2.5V, enabling efficient power management. Key electrical characteristics include a gate threshold voltage range of -0.4V to -1V, input capacitance of 665 pF, and total gate charge of 9.5 nC typical. The MOSFET is rated for power dissipation up to 37.5W at 25°C case temperature and operates over a junction temperature range of -65°C to 175°C. Housed in a TO-220-3 through-hole package, it is suitable for both linear pass element and low voltage load switch applications, as well as DC-DC converters requiring a P-Channel MOSFET. Originally from Fairchild Semiconductor, the part is now supported by On Semiconductor.
The maximum drain-source voltage is -20V.
The continuous drain current is -16A at 25°C case temperature.
The typical on-resistance is 80 mΩ at Vgs = -4.5V and Id = -8A, and 110 mΩ at Vgs = -2.5V and Id = -7A. Maximum values are 96 mΩ and 130 mΩ respectively.
The gate threshold voltage is -0.4V (minimum), -0.58V (typical), and -1V (maximum) at Vds = Vgs and Id = -250 µA.
The operating junction temperature range is -65°C to 175°C.
The FDP4020P is available in a TO-220-3 through-hole package.
The part is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.