| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP3651U is an N-Channel MOSFET manufactured by ON Semiconductor. It features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 80A. The device has a maximum on-resistance (Rds(on)) of 18 mOhm at Vgs=10V and Id=80A. The gate threshold voltage (Vgs(th)) is a maximum of 5.5V at Id=250µA. The gate charge (Qg) is 69 nC at Vgs=10V, and input capacitance (Ciss) is 5522 pF at Vds=25V. The maximum power dissipation is 255W. The operating temperature range is -55°C to 175°C. The device is housed in a TO-220-3 through-hole package, suitable for power switching applications. It is designed for use in power supplies, motor controls, and other high-current switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.46 | $3.46 |
| 10+ | $2.25 | $2.25 |
| 100+ | $1.58 | $1.58 |
| 500+ | $1.32 | $1.32 |
| 1,000+ | $1.22 | $1.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
TO-220-3 through-hole package.
-55°C to 175°C (junction).
RoHS3 compliant (unverified).
100V.
80A.
18 mOhm at Vgs=10V, Id=80A.
5.5V at Id=250µA.