| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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16 pcs
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16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FDP33N25 is an N-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor using their proprietary planar stripe, DMOS technology. This advanced technology is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses.
Key electrical characteristics include a drain-source breakdown voltage of 250V and a continuous drain current of 33A at 25°C. The static drain-source on-resistance is a maximum of 0.094 Ohms at a gate-source voltage of 10V and a drain current of 16.5A. It also features a low gate charge of typically 36.8 nC and low Crss of typically 39 pF, contributing to fast switching.
This MOSFET is well-suited for high-efficiency switched-mode power supplies and active power factor correction applications. It is available in TO-220 and TO-220F packages, with a standard package quantity of 50 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDSS) for the FDP33N25 is 250V.
The FDP33N25 has a continuous drain current of 33A at 25°C and 20.4A at 100°C.
The maximum static drain-source on-resistance (R DS(on)) for the FDP33N25 is 0.094 Ohms when VGS is 10V and ID is 16.5A.
The FDP33N25 is available in TO-220 and TO-220F package types.
The operating and storage temperature range for the FDP33N25 is -55°C to +150°C.