| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,020 pcs
|
11020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,000 pcs
|
2000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
763 pcs
|
763 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP33N25 is an N-Channel power MOSFET from onsemi's UniFET family, designed for high-voltage switching applications. It features a drain-source voltage rating of 250V and a continuous drain current of 33A at case temperature 25°C (20.4A at 100°C). The device offers a maximum on-resistance of 94mΩ at VGS = 10V and ID = 16.5A, contributing to efficient conduction in power conversion circuits.
This MOSFET is built on planar stripe and DMOS technology, providing improved switching performance and higher avalanche energy strength. It has a typical gate charge of 36.8nC and an input capacitance of 2135pF, supporting fast switching transitions in demanding power supply designs. The device is 100% avalanche tested and can handle a single pulsed avalanche energy of 918mJ, making it suitable for robust industrial applications.
The FDP33N25 is housed in a through-hole TO-220-3 package (TO-220-3LD), which facilitates easy mounting on PCBs and provides effective thermal transfer to a heatsink. The thermal resistance from junction to case is 0.53°C/W, and the maximum power dissipation at 25°C is 235W, with a derating factor of 1.89W/°C above 25°C. The device operates over a junction temperature range of -55°C to +150°C.
Typical applications include power factor correction (PFC), flat panel display (FPD) TV power, ATX power supplies, uninterruptible power supplies (UPS), lighting, and electronic lamp ballasts.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.03 | $3.03 |
| 10+ | $1.51 | $1.51 |
| 100+ | $1.35 | $1.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 250V.
33A at case temperature 25°C; 20.4A at 100°C.
Maximum 94mΩ at VGS = 10V and ID = 16.5A.
Through-hole TO-220-3 (TO-220-3LD).
-55°C to +150°C (junction).
918mJ under specified test conditions.
Listed as RoHS3 compliant in existing data, but this is unverified.