| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,027 pcs
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5027 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This is an N-Channel power MOSFET from ON Semiconductor, part number FDP26N40. It features a drain-source breakdown voltage of 400V and a continuous drain current of 26A at case temperature (Tc).
The device utilizes MOSFET (Metal Oxide) technology with a maximum drain-source on-resistance of 160 mOhm at 13A and 10V gate drive. It requires a gate threshold voltage of up to 5V at 250µA. The maximum gate charge is 60 nC at 10V, and input capacitance is 3185 pF at 25V drain-source.
Packaged in a TO-220-3 through-hole package, it is suitable for through-hole mounting. The operating temperature range is -55°C to 150°C (junction). Maximum power dissipation is 265W at case temperature.
The maximum drain-source voltage (Vdss) is 400V.
The continuous drain current is 26A at case temperature (Tc).
It comes in a TO-220-3 through-hole package.
The operating temperature range is -55°C to 150°C (junction).
Maximum drain-source on-resistance is 160 mOhm at 13A and 10V gate drive.
RoHS3 Compliant, but this is unverified and low confidence.
Maximum gate threshold voltage is 5V at 250µA drain current.