| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,570 pcs
|
1570 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP2572 is an N-Channel power MOSFET manufactured by On Semiconductor. It features a maximum drain-source voltage (Vdss) of 150V and a continuous drain current rating of 4A at ambient temperature (Ta) and 29A at case temperature (Tc). The device offers a low on-resistance of 54mΩ maximum at 9A drain current and 10V gate-source voltage.
This MOSFET is designed for efficient power switching applications. It has a gate charge of 34nC maximum at 10V and an input capacitance of 1770pF at 25V drain-source voltage. The gate-source threshold voltage is 4V maximum at 250µA, and the recommended drive voltage range is 6V to 10V for optimal Rds(on). Maximum power dissipation is 135W at case temperature.
The FDP2572 is packaged in a through-hole TO-220-3 package, suitable for easy mounting on heatsinks. It operates over a junction temperature range of -55°C to 175°C, making it suitable for demanding environments. The device is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.31 | $3.31 |
| 10+ | $1.94 | $1.94 |
| 100+ | $1.46 | $1.46 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-55°C to 175°C (junction temperature).
TO-220-3 through-hole package.
Yes, it is RoHS3 compliant.
150V.
4A at ambient temperature (Ta) and 29A at case temperature (Tc).
Maximum 54mΩ at 9A drain current and 10V gate-source voltage.
Maximum 34nC at 10V gate-source voltage.