| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP22N50N is an N-Channel MOSFET from On Semiconductor's UniFET II family, based on advanced planar stripe and DMOS technology. It features a maximum drain-source voltage of 500V and continuous drain current of 22A at 25°C. The device offers low on-resistance (185 mOhm typical at Vgs=10V), low gate charge (49 nC typical), and low reverse transfer capacitance (24 pF) for efficient switching performance. It is 100% avalanche tested with a single pulse avalanche energy rating of 1000 mJ. The MOSFET is suitable for switching power converter applications such as power factor correction (PFC), flat panel display TV power supplies, ATX power supplies, and electronic lamp ballasts. It is RoHS compliant and comes in a TO-220-3 through-hole package with a standard package quantity of 1000 units per tube.
| Qty | Low | High |
|---|---|---|
| 1+ | $5.71 | $5.71 |
| 10+ | $3.74 | $3.74 |
| 100+ | $2.75 | $2.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
500V maximum.
TO-220-3 through-hole package.
-55°C to 150°C junction temperature.
Yes, RoHS3 compliant (unverified).
22A.
185 mOhm at Vgs=10V, Id=11A.
5V maximum at Id=250µA.