| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
109,500 pcs
|
109500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
22,000 pcs
|
22000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP20N50 is a N-Channel MOSFET from On Semiconductor, designed for high-voltage switching applications. It features a maximum drain-to-source voltage of 500V and continuous drain current of 20A at case temperature.
The device has a low on-resistance of 230mOhm at 10V gate drive, with a gate charge of 59.5nC and input capacitance of 3120pF, enabling efficient switching. The maximum power dissipation is 250W.
Housed in a TO-220-3 through-hole package, it operates over a junction temperature range of -55°C to 150°C. This MOSFET is suitable for power supplies, motor control, and inverters.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.45 | $1.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 500V.
The maximum continuous drain current is 20A at case temperature.
The package is TO-220-3 with through-hole mounting.
The operating junction temperature range is -55°C to 150°C.
It is listed as RoHS3 Compliant, but this status is unverified.
The maximum gate threshold voltage is 5V at 250µA.
The maximum power dissipation is 250W at case temperature.