| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP19N40 is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for high-voltage switching applications, featuring a drain-to-source voltage (Vdss) of 400 V and a continuous drain current (Id) of 19 A at case temperature (Tc). The device offers a maximum on-resistance (Rds(on)) of 240 mOhm at a gate drive of 10 V and a drain current of 9.5 A.
This MOSFET utilizes metal-oxide semiconductor technology and requires a gate drive voltage of 10 V for optimal performance. The maximum gate threshold voltage is 5 V at a drain current of 250 µA. The device can handle a maximum power dissipation of 215 W at case temperature and operates over a junction temperature range of -55°C to 150°C.
The FDP19N40 is supplied in a standard TO-220-3 through-hole package, making it suitable for a wide range of power conversion and switching circuits. The input capacitance is 2115 pF at a drain-source voltage of 25 V, and the total gate charge is 40 nC at a gate voltage of 10 V.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $0.93 | $0.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 400 V.
The maximum continuous drain current is 19 A at case temperature (Tc).
The maximum on-resistance is 240 mOhm at a gate voltage of 10 V and a drain current of 9.5 A.
The FDP19N40 is supplied in a TO-220-3 through-hole package.
The operating junction temperature range is -55°C to 150°C.
The FDP19N40 is listed as RoHS3 compliant, though this is unverified.
The maximum gate threshold voltage is 5 V at a drain current of 250 µA.