| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,967 pcs
|
1967 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FDP18N20F is an N-Channel MOSFET from On Semiconductor, part of the UniFET FRFET family. It is designed for high-voltage switching applications with a drain-source voltage rating of 200V and a continuous drain current of 18A at Tc=25°C. The device features a maximum on-resistance of 145mΩ at Vgs=10V and Id=9A, with a typical value of 120mΩ. Gate charge is typically 20nC, enabling efficient switching. The MOSFET is 100% avalanche tested, with a single-pulse avalanche energy rating of 324mJ. It is housed in a TO-220-3 through-hole package, suitable for power dissipation up to 100W at Tc=25°C. The operating junction temperature range is -55°C to 150°C. This device is suitable for power converter applications such as power factor correction (PFC), LCD/LED TV power supplies, AC-DC power supplies, and lighting ballasts.
200V.
18A at Tc=25°C, limited by maximum junction temperature.
Maximum 145mΩ at Vgs=10V, Id=9A; typical 120mΩ.
Maximum 5V at Id=250µA.
-55°C to 150°C (junction).
TO-220-3 through-hole package.
RoHS3 compliant (unverified).